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| NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES * * * * * SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz LOW CURRENT OPERATION 2.0 0.2 1.3 2 UPA802T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) 2.1 0.1 1.25 0.1 0.65 1 6 0.2 (All Leads) 5 DESCRIPTION NEC's UPA802T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 3 4 0.9 0.1 0.7 0.15 - 0.05 +0.10 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 GHz pF dB dB 0.85 10 12 1.4 1.7 UNITS A A 70 4.5 100 7.0 0.9 MIN UPA802T S06 TYP MAX 0.8 0.8 240 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA802T-T1, 3K per reel. California Eastern Laboratories UPA802T ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW C C RATINGS 20 10 1.5 65 110 200 150 -65 to +150 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Free Air 200 2 El em en ts Pe in rE lem To t al en t TJ TSTG 100 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 0 50 100 150 TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 20 Ambient Temperature, TA (C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V Collector Current, IC (mA) 140 A 15 120 A 100 A 10 80 A 60 A 5 40 A lB=20 A Collector Current, IC (mA) 20 160 A 10 0 0.5 1.0 0 0.5 1.0 Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 5.0 FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz DC Current Gain, hFE 100 Feed Back Capacitance, CRE (pF) VCE = 3 V 2.0 1.0 50 0.5 20 0.2 10 0.5 1 5 10 50 0.1 1 2 5 10 20 50 Collector Current, IC (mA) Collector to Base Voltage, VCB (V) UPA802T TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 15 INSERTION POWER GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) 8 Insertion Power Gain, IS21eI2 (dB) VCE = 3 V f = 1 GHz VCE = 3 V f = 1 GHz 10 6 4 5 2 0 0.5 1 5 10 50 0 0.5 1 5 10 50 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN vs. FREQUENCY 25 NOISE FIGURE vs. COLLECTOR CURRENT 5 VCE = 3 V f = 1 GHz 4 Insertion Power Gain, IS21eI2 (dB) VCE = 3 V lc = 7 mA 20 15 Noise Figure (dB) 0.2 0.5 1.0 2.0 5.0 3 10 2 5 1 0 0.1 0 0.5 1.0 5.0 10 50 Frequency, f (GHz) Collector Current, IC (mA) UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 90 60 150 30 S12 3.0 GHz j10 S11 3.0 GHz 0 10 25 50 100 S22 0.1 GHz S11 0.1 GHz 180 S21 0.1 GHz S21 S12 3.0 GHz 0.1 GHz 0 -j10 S22 3.0 GHz -j25 -j50 -j100 -150 -30 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 1 mA ZO = 50 -120 -90 -60 UPA802T(Q1) VCE = 1 V, IC = 1 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.958 0.928 0.848 0.760 0.687 0.633 0.596 0.569 0.551 0.540 0.531 0.526 0.520 0.520 0.517 0.520 ANG -15.16 -28.69 -55.75 -78.46 -97.04 -112.40 -125.48 -136.93 -147.13 -156.65 -165.70 -174.27 177.45 169.16 161.23 153.22 MAG 3.187 3.093 2.811 2.474 2.147 1.863 1.654 1.479 1.341 1.225 1.132 1.055 0.992 0.930 0.880 0.836 S21 ANG 166.69 156.52 136.55 120.48 107.67 97.49 88.81 81.45 75.09 69.42 64.10 59.52 55.07 51.37 47.57 44.36 MAG 0.032 0.062 0.108 0.136 0.150 0.157 0.157 0.155 0.150 0.146 0.140 0.136 0.133 0.132 0.135 0.142 S12 ANG 79.93 71.38 55.84 44.42 36.37 30.81 27.29 25.10 24.63 24.53 26.86 29.55 34.37 39.26 45.21 50.87 MAG 0.988 0.963 0.888 0.814 0.754 0.714 0.679 0.659 0.642 0.635 0.624 0.620 0.610 0.607 0.602 0.594 S22 ANG -6.58 -12.80 -22.64 -29.45 -34.20 -37.74 -40.65 -43.13 -45.30 -47.38 -49.27 -51.13 -53.10 -54.72 -56.65 -58.18 K Gmag (dB) 0.09 0.13 0.24 0.35 0.47 0.58 0.71 0.84 0.98 1.11 1.27 1.40 1.54 1.64 1.71 1.74 19.96 16.97 14.15 12.60 11.54 10.75 10.23 9.79 9.51 7.24 5.96 5.14 4.38 3.77 3.21 2.70 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 90 60 150 30 j10 S11 3.0 GHz 10 25 50 100 S22 0.1 GHz S11 0.1 GHz 180 S21 0.1 GHz S12 0.1 GHz 0 S12 3.0 GHz S21 3.0 GHz 0 -j10 S22 3.0 GHz -150 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 1 mA ZO = 50 -120 -90 -60 UPA802T(Q2) VCE = 1 V, IC = 1 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.957 0.931 0.856 0.770 0.697 0.646 0.611 0.590 0.579 0.575 0.574 0.576 0.576 0.580 0.579 0.581 ANG -14.40 -28.20 -55.36 -78.82 -98.60 -115.24 -129.46 -141.68 -152.33 -161.59 -170.02 -177.47 175.74 169.40 163.57 157.88 MAG 3.197 3.113 2.858 2.541 2.222 1.934 1.718 1.533 1.383 1.258 1.158 1.071 1.002 0.938 0.884 0.839 S21 ANG 167.02 157.17 137.29 120.96 107.64 96.85 87.54 79.60 72.70 66.56 60.84 55.92 51.22 47.30 43.32 39.98 MAG 0.030 0.059 0.103 0.132 0.147 0.154 0.154 0.153 0.148 0.144 0.137 0.131 0.126 0.124 0.124 0.128 S12 ANG 80.47 71.80 56.14 44.20 35.41 29.00 24.60 21.50 20.19 19.08 20.45 22.10 26.20 30.61 36.59 42.78 MAG 0.989 0.966 0.894 0.819 0.756 0.710 0.670 0.645 0.623 0.615 0.600 0.594 0.580 0.578 0.572 0.563 S22 ANG -6.14 -12.02 -21.53 -28.30 -33.20 -37.02 -40.30 -43.31 -46.01 -49.02 -51.86 -54.76 -57.65 -60.58 -63.54 -66.31 K Gmag (dB) 0.09 0.13 0.23 0.34 0.46 0.57 0.70 0.82 0.97 1.08 1.25 1.38 1.56 1.67 1.78 1.84 20.25 17.25 14.41 12.86 11.80 11.00 10.47 10.02 9.72 7.65 6.29 5.42 4.60 4.00 3.41 2.87 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 90 60 150 30 S21 3.0 GHz j10 S11 3.0 GHz 10 25 50 100 S22 0.1 GHz S11 0.1 GHz 180 S21 0.1 GHz S12 0.1 GHz 0 S12 3.0 GHz 0 -j10 S22 3.0 GHz -j100 -j50 -150 -30 -j25 Coordinates in Ohms Frequency in GHz VCE = 2.5 V, IC = 1 mA ZO = 50 -120 -90 -60 UPA802T(Q1) VCE = 2.5 V, IC = 1 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.961 0.936 0.866 0.784 0.709 0.652 0.609 0.578 0.556 0.540 0.528 0.519 0.512 0.508 0.505 0.506 ANG -13.74 -25.96 -51.02 -72.59 -90.73 -106.09 -119.38 -131.20 -141.82 -151.78 -161.28 -170.30 -179.05 172.23 163.81 155.42 MAG 3.109 3.034 2.803 2.512 2.212 1.938 1.731 1.553 1.408 1.289 1.188 1.105 1.037 0.970 0.915 0.868 S21 ANG 167.68 158.68 140.07 124.70 112.14 102.04 93.28 85.91 79.52 73.82 68.51 63.86 59.43 55.60 51.86 48.52 MAG 0.025 0.048 0.085 0.108 0.121 0.127 0.128 0.127 0.123 0.119 0.115 0.111 0.110 0.110 0.114 0.121 S12 ANG 81.01 73.40 58.87 47.90 40.02 34.59 31.16 29.20 28.96 29.44 32.25 35.73 41.40 47.08 53.76 59.74 MAG 0.992 0.973 0.915 0.854 0.803 0.767 0.736 0.717 0.701 0.694 0.684 0.680 0.670 0.668 0.664 0.658 S22 ANG -5.18 -10.17 -18.43 -24.40 -28.70 -31.93 -34.55 -36.80 -38.74 -40.60 -42.21 -43.79 -45.38 -46.67 -48.22 -49.36 K Gmag (dB) 0.09 0.12 0.23 0.33 0.45 0.56 0.70 0.83 0.97 1.11 1.28 1.42 1.56 1.66 1.71 1.72 21.01 18.03 15.20 13.65 12.61 11.83 11.31 10.88 10.59 8.33 7.00 6.13 5.34 4.70 4.12 3.60 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 90 60 150 30 S21 3.0 GHz j10 S11 3.0 GHz 0 10 25 50 100 S22 0.1 GHz -j10 S11 0.1 GHz 180 S21 0.1 GHz S12 0.1 GHz S12 3.0 GHz 0 S22 3.0 GHz -j25 -j50 -j100 -150 -30 Coordinates in Ohms Frequency in GHz VCE = 2.5 V, IC = 1 mA ZO = 50 -120 -90 -60 UPA802T(Q2) VCE = 2.5 V, IC = 1 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.960 0.939 0.873 0.793 0.719 0.664 0.624 0.598 0.582 0.574 0.570 0.570 0.569 0.570 0.569 0.569 ANG -12.87 -25.48 -50.50 -72.66 -91.93 -108.57 -123.04 -135.77 -146.93 -156.82 -165.76 -173.69 179.04 172.27 166.04 160.07 MAG 3.120 3.052 2.847 2.579 2.290 2.015 1.803 1.616 1.460 1.331 1.222 1.129 1.055 0.985 0.927 0.878 S21 ANG 168.01 159.33 140.93 125.40 112.39 101.75 92.38 84.42 77.51 71.33 65.61 60.65 55.96 51.94 48.02 44.54 MAG 0.023 0.044 0.079 0.103 0.116 0.122 0.124 0.123 0.119 0.115 0.110 0.106 0.102 0.101 0.103 0.107 S12 ANG 81.72 73.80 59.29 47.91 39.33 33.12 28.81 25.96 24.89 24.36 26.19 28.67 33.64 39.03 45.91 52.65 MAG 0.993 0.976 0.922 0.862 0.809 0.769 0.734 0.711 0.691 0.682 0.669 0.663 0.649 0.648 0.641 0.634 S22 ANG -4.73 -9.36 -17.18 -23.00 -27.36 -30.79 -33.73 -36.46 -38.85 -41.54 -44.01 -46.54 -48.97 -51.47 -53.98 -56.30 K Gmag (dB) 0.09 0.12 0.22 0.33 0.44 0.55 0.68 0.81 0.96 1.09 1.26 1.41 1.59 1.70 1.79 1.83 21.39 18.40 15.55 14.00 12.96 12.17 11.64 11.20 10.90 8.83 7.41 6.49 5.63 5.02 4.40 3.85 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 S21 0.1 GHz 150 90 S12 0.1 GHz 60 30 j10 S11 3.0 GHz 10 25 50 100 S22 3.0 GHz S22 0.1 GHz 180 S12 3.0 GHz S21 3.0 GHz 0 0 -j10 S11 0.1 GHz -150 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 5 V, IC = 5 mA ZO = 50 -120 -90 -60 UPA802T(Q1) VCE = 5 V, IC = 5 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.824 0.738 0.566 0.457 0.395 0.358 0.335 0.318 0.309 0.300 0.294 0.290 0.288 0.289 0.290 0.295 ANG -25.25 -47.27 -83.01 -107.67 -125.58 -139.68 -151.26 -161.37 -170.29 -178.64 173.52 166.20 159.02 151.93 145.02 138.35 MAG 13.043 11.730 8.848 6.700 5.286 4.336 3.675 3.186 2.819 2.525 2.291 2.100 1.942 1.804 1.689 1.587 S21 ANG 159.74 143.72 120.53 106.46 97.09 90.05 84.25 79.25 74.86 70.74 66.94 63.40 59.98 56.88 53.83 50.95 MAG 0.019 0.033 0.050 0.060 0.067 0.074 0.082 0.090 0.099 0.108 0.117 0.128 0.138 0.149 0.160 0.172 S12 ANG 76.03 65.58 54.81 52.18 52.99 55.02 57.29 59.48 61.60 63.26 64.82 65.97 67.03 67.72 68.34 68.64 MAG 0.956 0.867 0.704 0.610 0.561 0.536 0.522 0.516 0.513 0.513 0.514 0.516 0.516 0.516 0.516 0.514 S22 ANG -11.30 -19.95 -28.18 -30.60 -31.32 -31.84 -32.43 -33.24 -33.99 -34.99 -35.94 -36.91 -38.01 -38.86 -39.93 -40.64 K Gmag (dB) 0.15 0.27 0.50 0.70 0.86 0.99 1.08 1.14 1.19 1.22 1.23 1.24 1.24 1.24 1.23 1.23 28.42 25.47 22.47 20.51 18.97 17.66 14.80 13.17 11.94 10.89 10.00 9.23 8.52 7.89 7.33 6.78 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 120 S21 0.1 GHz 150 90 60 S12 0.1 GHz 30 j10 S11 3.0 GHz 10 25 S12 3.0 GHz 180 0 50 100 S22 0.1 GHz S11 0.1 GHz S21 3.0 GHz 0 -j10 S22 3.0 GHz -150 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 5 V, IC = 5 mA ZO = 50 -120 -90 -60 UPA802T(Q2) VCE = 5 V, IC = 5 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.823 0.743 0.575 0.467 0.408 0.377 0.362 0.354 0.352 0.353 0.356 0.358 0.360 0.363 0.364 0.364 ANG -24.36 -46.52 -82.78 -108.62 -127.86 -143.07 -155.37 -165.68 -174.22 178.37 171.97 166.50 161.52 157.00 152.78 148.84 MAG 13.414 12.139 9.280 7.075 5.599 4.595 3.896 3.376 2.977 2.666 2.416 2.210 2.038 1.893 1.770 1.663 S21 ANG 160.23 144.45 121.05 106.49 96.62 89.14 82.94 77.52 72.75 68.30 64.18 60.30 56.62 53.22 49.89 46.72 MAG 0.017 0.030 0.046 0.055 0.062 0.068 0.075 0.082 0.090 0.098 0.107 0.115 0.125 0.135 0.145 0.156 S12 ANG 76.18 65.94 54.57 51.23 51.37 52.88 54.71 56.53 58.55 59.82 61.15 62.13 63.09 63.71 64.24 64.58 MAG 0.959 0.877 0.717 0.621 0.568 0.537 0.518 0.506 0.497 0.492 0.488 0.485 0.480 0.479 0.477 0.473 S22 ANG -10.44 -18.55 -26.47 -28.79 -29.56 -30.23 -31.06 -32.27 -33.34 -35.02 -36.66 -38.36 -40.00 -41.73 -43.44 -44.93 K Gmag (dB) 0.15 0.26 0.49 0.69 0.85 0.98 1.08 1.15 1.20 1.23 1.25 1.26 1.27 1.27 1.26 1.26 28.98 26.02 23.03 21.10 19.57 18.27 15.41 13.76 12.47 11.45 10.54 9.75 9.00 8.38 7.79 7.23 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain ORDERING INFORMATION PART NUMBER UPA802T-T1-A QUANTITY 3000 PACKAGING Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. |
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